Low energy silicon etching technologies
نویسندگان
چکیده
منابع مشابه
Etching silicon nanotubes
transcription activation complex. The positions and orientations of all the components and the detailed protein-protein and protein–nucleic acid interactions reveal how an activator interacts with the promoter DNA and recruits RNA polymerase through the class I mechanism. Together with a recently reported class II transcription activation complex, the findings complete our structural understand...
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Alkaline etching of crystalline using KOH (potassium hydroxide), TMAH (tetramethyl ammonium hydroxide), or EDP (ethylenediamene pyrocatecol) is performed for creating various feature definition in MEMS (micro electrical mechanical structures, solar cells, and integrated circuit manufacturing. KOH will be discussed in this section. The alkaline chemistries have the ability to preferentially etch...
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The aim of this work is to demonstrate the “dry” etching based micro-fabrication technologies in the manufacturing of Single Crystal Silicon (SCS) for Micro-Electro/(Optical)-Mechanical-Systems (ME(O)MS). The ME(O)MS technology is very fast growing industry branch based often on the same silicon technology as integrated circuits. The process of plasma-dry etching is quite simple straightforward...
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The range distributions of low-energy nitrogen and oxygen (2-3 keV) ions is silicon are measured and compared with these available in theories. The nitrogen distribution is very close to a Gaussian distribution as predicted by theory. The oxygen profile however, indicates a surface localized peak along with a shoulder and a long tail into the sample. The surface peak is beleived to he the resul...
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We present a simple design technique that allows the fabrication of UV/blueselective avalanche photodiodes in a conventional CMOS process. The photodiodes are fabricated in a twin tub 0.8 m CMOS technology. An efficient guard-ring structure is created using the lateral diffusion of two n-well regions separated by a gap of 0.6 m. When operated at a multiplication gain of 20, our photodiodes achi...
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ژورنال
عنوان ژورنال: Microelectronic Engineering
سال: 1991
ISSN: 0167-9317
DOI: 10.1016/0167-9317(91)90124-v